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Atomic Layer Deposition System 詳細説明 AT400 Base ALD System
Table Top Atomic Layer Deposition Unit, suitable for up to 5 lines. Precise precursor dosing with defined dose volumes: - Reduces process and dose variability common to competitors - Fast cycling capability - 6-10 cycles/min or up to 1.2nm/min Al2O3 (best in class)
Features: - Substrate size up to 4" (100mm) diameter - Chamber temperatures from RT to 400°C ± 1°C - Precursor temperatures from RT to 150°C ± 2°C with optional heating jackets - 2 counter reactants - standard - 1 liquid source such as H2O or H2O2 - 1 gas source such as O2 or NH3 - 2 gas sources can be used as well - Variable process pressure control 0.1 to 1.5Torr - All metal sealed system upstream of sample - Up to 3x Heated sources - Volume controlled dosing (Volume control yields more repeatable precursor doses) - Valve time controlled dosing - Exposure Control - Point source Gas Distribution with Optimal Spreading for superior film uniformity - Integrated, angled HMI/PLC SW/Controls (prevents random SW lockups) - Robust 7" touch screen PLC control system - Recipe Control: proven recipes pre-loaded in controller - Smallest Footprint on the market (55cm W x 55cm D X 39cm H), cleanroom compatible - Weight 45kg
Other: - Pump (> 12cfm) to be provided by customer - Facilities required (15amp power, 10psi regulated high purity N2 or Ar with 1/4" face seal fittings, 1" vacuum line or 1.5" line for lengths >4ft, compressed dry air 70-80 psi) - Excellent Process Development Support (Harvard lab scientsts provide evidence based assistance to customers) - Simple system maintenance and integrated vacuum interlock. 前のページ: Mask Aligners 次のページ: Film Thickness Gauges |